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IXFN 200N06 IXFN 200N07
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
g fs
C iss
C oss
C rss
t d(on)
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
60
80
9000
4000
2400
30
S
pF
pF
pF
ns
t r
t d(off)
t f
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 ? (External),
60
100
60
ns
ns
ns
M4 screws (4x) supplied
Dim. Millimeter
Min. Max.
A 31.50 31.88
Inches
Min. Max.
1.240 1.255
Q g(on)
480
nC
B
C
7.80
4.09
8.20
4.29
0.307
0.161
0.323
0.169
Q gs
Q gd
R thJC
R thCK
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
60
240
0.05
0.24
nC
nC
K/W
K/W
D
E
F
G
H
J
K
L
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
M
N
O
P
Q
R
S
12.60
25.15
1.98
4.95
26.54
3.94
4.72
12.85
25.42
2.13
5.97
26.90
4.42
4.85
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.506
1.001
0.084
0.235
1.059
0.174
0.191
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = 100 A, V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
150
200
600
1.7
250
A
A
V
ns
Q RM
I RM
I F = 25 A
-di/dt = 100 A/ μ s,
V R = 50 V
0.7
9
μ C
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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